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1N728WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
For super-high speed switching and wave detection circuit applications
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
PP Top View Marking Code: "PP" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Forward Current Peak Forward Current Junction Temperature Storage Temperature Range
Symbol VRM VR IF IFM Tj Ts
Value 30 30 30 150 125 - 55 to + 125
Unit V V mA mA
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 1 mA at IF = 30 mA Reverse Current at VR = 30 V Terminal Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Detection Efficiency at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 K, CL = 10 pF Symbol VF Typ. 1.5 1 65 Max. 0.4 1 0.3 Unit V
IR CT trr
A pF ns %
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
1N728WS
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
1N728WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006

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